Three-dimensional memory devices with backside isolation structures

ABSTRACT

A method for forming a three-dimensional memory device includes forming, on a first side of a first substrate, a plurality of semiconductor devices including at least first and second semiconductor devices, a first interconnect layer, and a shallow trench isolation (STI) structure between the semiconductor devices, and forming, on a second substrate, a memory array including a plurality of memory cells and a second interconnect layer. The method includes connecting the first and second interconnect layers and forming an isolation trench through the first substrate and exposing a portion of the STI structure. The isolation trench is formed through a second side of the first substrate that is opposite to the first side. The method includes disposing an isolation material to form an isolation structure in the isolation trench and performing a planarization process to remove portions of the isolation material disposed on the second side of the first substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to PCT Patent Application No.PCT/CN2019/111648, filed on Oct. 17, 2019, which is incorporated hereinby reference in its entirety.

BACKGROUND

Planar memory cells are scaled to smaller sizes by improving processtechnology, circuit designs, programming algorithms, and fabricationprocesses. However, as feature sizes of the memory cells approach alower limit, planar processes and fabrication techniques becomechallenging and costly. As such, memory density for planar memory cellsapproaches an upper limit. A three-dimensional (3D) memory architecturecan address the density limitation in planar memory cells.

BRIEF SUMMARY

Embodiments of a three-dimensional (3D) capacitor structure for a memorydevice and methods for forming the same are described in the presentdisclosure.

In some embodiments, a method includes forming, on a first side of afirst substrate, a plurality of semiconductor devices including at leastfirst and second semiconductor devices, The method includes forming ashallow trench isolation (STI) structure between the first and secondsemiconductor devices and forming a first interconnect layer on theplurality of semiconductor devices. The method further includes forming,on a second substrate, a memory array including a plurality of memorycells and a second interconnect layer. The method includes connectingthe first and second interconnect layers, and forming an isolationtrench through the first substrate to expose a portion of the STIstructure. The isolation trench is formed through a second side of thefirst substrate that is opposite to the first side. The method includesdisposing an isolation material to form an isolation structure in theisolation trench and performing a planarization process to removeportions of the isolation material disposed on the second side of thefirst substrate.

In some embodiments, the first and second semiconductor devices includea high-voltage n-type device and a high-voltage p-type device,respectively.

In some embodiments, the first substrate is thinned through the secondside after connecting the first and second interconnect layers.

In some embodiments, thinning the first substrate includes exposing adeep well on the second side of the first substrate.

In some embodiments, a liner layer is disposed in the isolation trenchbefore disposing the isolation material.

In some embodiments, a dielectric layer is disposed on the second sideof the first substrate.

In some embodiments, the connecting the first and second interconnectlayers includes bonding the first and second interconnect layers throughdirect bonding.

In some embodiments, a further STI structure is formed adjacent to thefirst or second semiconductor device and another deep isolation trenchis formed through the first substrate and exposing the further STIstructure.

In some embodiments, the isolation material is disposed in the furtherdeep isolation trench.

In some embodiments, a trench is formed in the first substrate andexposing a contact. Conductive material is disposed in the trench and onthe contact to form a through silicon contact (TSC) where the TSC iselectrically coupled to the contact.

In some embodiments, at least one contact pad is formed on the TSC andelectrically coupled to the TSC.

In some embodiments, disposing the isolation material includesdepositing silicon oxide material.

In some embodiments, bonding the first and second interconnect layersincludes dielectric-to-dielectric bonding and metal-to-metal bonding ata bonding interface.

In some embodiments, a method for forming a three-dimensional memorydevice includes forming, on a first side of a first substrate, aperipheral circuitry including a plurality of semiconductor devices anda first interconnect layer. The method also includes forming a pluralityof shallow trench isolation (STI) structures in the first substrate,wherein each STI structure of the plurality of STI structures is formedbetween adjacent semiconductor devices of the plurality of semiconductordevices. The method further includes forming, on a second substrate, amemory array comprising a plurality of memory cells and a secondinterconnect layer. The method further includes connecting the first andsecond interconnect layers, such that at least one semiconductor deviceof the plurality of semiconductor is electrically coupled to at leastone memory cell of the plurality of memory cells. The method furtherincludes thinning the first substrate through a second side of the firstsubstrate, wherein the second side is opposite to the first side. Themethod further includes forming a plurality of isolation trenchesthrough the first substrate and exposing a portion of an STI structureof the plurality of STI structures, wherein the plurality of isolationtrenches are formed through the second side of the first substrate. Themethod further includes disposing an isolation material in the pluralityof isolation trenches and performing a planarization process to removeportions of the isolation material disposed on the second side of thefirst substrate.

In some embodiments, the connecting the first and second interconnectlayers includes bonding the first and second interconnect layers throughdirect bonding.

In some embodiments, a dielectric layer is disposed on the second sideof the first substrate, wherein the plurality of isolation trenchesextend through the dielectric layer.

In some embodiments, a liner layer is disposed in the isolation trenchbefore disposing the isolation material.

In some embodiments, disposing the isolation material includes disposingsilicon oxide material.

In some embodiments, the plurality of semiconductor devices includehigh-voltage n-type and p-type devices.

In some embodiments, a trench is formed in the first substrate and acontact is exposed. Conductive material is disposed in the trench and onthe contact to form a through silicon contact (TSC) where the TSC iselectrically coupled to the contact.

In some embodiments, a three-dimensional memory device includes aperipheral circuitry wafer that includes a first substrate and aplurality of semiconductor devices and a first interconnect layer formedat a first side of the first substrate. The peripheral circuitry waferalso includes a plurality of shallow trench isolation (STI) structuresin the first substrate, wherein at least one STI structure is formedbetween adjacent semiconductor devices of the plurality of semiconductordevices. The peripheral circuitry wafer also includes a plurality ofdeep isolation structures formed on a second side of the first substratethat is opposite to the first side, wherein at least one deep isolationstructure of the plurality of deep isolation structures is in physicalcontact with the at least one STI structure. The three-dimensionalmemory device also includes a memory array wafer that includes aplurality of memory cells, wherein at least one semiconductor device ofthe plurality of semiconductor devices is electrically coupled to atleast one memory cell of the plurality of memory cells. The memory arraywafer also includes a second interconnect layer in physical contact withthe first interconnect layer.

In some embodiments, the at least one deep isolation structure includesa liner layer and isolation material, wherein the liner layer is betweenthe isolation material and the first substrate.

In some embodiments, the physical contact includes chemical bonds formedbetween the first and second interconnect layers.

In some embodiments, the at least one deep isolation structure includessilicon oxide.

In some embodiments, the plurality of semiconductor devices includehigh-voltage devices.

In some embodiments, the plurality of semiconductor devices includehigh-voltage s-type and p-type devices.

In some embodiments, the first substrate includes a contact electricallycoupled to a through silicon contact (TSC).

In some embodiments, the three-dimensional memory device also includes acontact pad in contact with and electrically coupled to the TSC.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate embodiments of the present disclosureand, together with the description, further serve to explain theprinciples of the present disclosure and to enable a person skilled inthe pertinent art to make and use the present disclosure.

FIG. 1A illustrates a schematic top-down view of an exemplarythree-dimensional (3D) memory die, according to some embodiments of thepresent disclosure.

FIG. 1B illustrates a schematic top-down view of a region of 3D memorydie, according to some embodiments of the present disclosure.

FIG. 2 illustrates a perspective view of a portion of an exemplary 3Dmemory array structure, in accordance with some embodiments of thepresent disclosure.

FIG. 3 illustrates a flow diagram of forming 3D memory array with deepisolation structures, in accordance with some embodiments of the presentdisclosure.

FIG. 4 illustrates a cross-sectional view of a peripheral circuitryhaving high-voltage n-type and p-type devices, according to someembodiments of the present disclosure.

FIG. 5 illustrates a cross-sectional view of a memory array, accordingto some embodiments of the present disclosure.

FIG. 6 illustrates a cross-sectional view of a 3D memory device afterbonding the peripheral circuitry and the memory array, according to someembodiments of the present disclosure.

FIGS. 7-9 illustrate cross-sectional views of a 3D memory device atvarious process stages, according to some embodiments of the presentdisclosure.

FIGS. 10A-10B illustrate top-down views of a 3D memory device, accordingto some embodiments of the present disclosure.

The features and advantages of the present invention will become moreapparent from the detailed description set forth below when taken inconjunction with the drawings, in which like reference charactersidentify corresponding elements throughout. In the drawings, likereference numbers generally indicate identical, functionally similar,and/or structurally similar elements. The drawing in which an elementfirst appears is indicated by the leftmost digit(s) in the correspondingreference number.

Embodiments of the present disclosure will be described with referenceto the accompanying drawings.

DETAILED DESCRIPTION

Although specific configurations and arrangements are discussed, itshould be understood that this is done for illustrative purposes only. Aperson skilled in the pertinent art will recognize that otherconfigurations and arrangements can be used without departing from thespirit and scope of the present disclosure. It will be apparent to aperson skilled in the pertinent art that the present disclosure can alsobe employed in a variety of other applications.

It is noted that references in the specification to “one embodiment,”“an embodiment,” “an example embodiment,” “some embodiments,” etc.,indicate that the embodiment described can include a particular feature,structure, or characteristic, but every embodiment can not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases do not necessarily refer to the same embodiment. Further,when a particular feature, structure or characteristic is described inconnection with an embodiment, it would be within the knowledge of aperson skilled in the pertinent art to affect such feature, structure orcharacteristic in connection with other embodiments whether or notexplicitly described.

In general, terminology can be understood at least in part from usage incontext. For example, the term “one or more” as used herein, dependingat least in part upon context, can be used to describe any feature,structure, or characteristic in a singular sense or can be used todescribe combinations of features, structures or characteristics in aplural sense. Similarly, terms, such as “a,” “an,” or “the,” again, canbe understood to convey a singular usage or to convey a plural usage,depending at least in part upon context. In addition, the term “basedon” can be understood as not necessarily intended to convey an exclusiveset of factors and may, instead, allow for existence of additionalfactors not necessarily expressly described, again, depending at leastin part on context.

It should be readily understood that the meaning of “on,” “above,” and“over” in the present disclosure should be interpreted in the broadestmanner such that “on” not only means “directly on” something, but alsoincludes the meaning of “on” something with an intermediate feature or alayer there between. Moreover, “above” or “over” not only means “above”or “over” something, but can also include the meaning it is “above” or“over” something with no intermediate feature or layer there between(i.e., directly on something).

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, can be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or process step in addition to the orientation depicted inthe figures. The apparatus can be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein can likewise be interpreted accordingly.

As used herein, the term “substrate” refers to a material onto whichsubsequent material layers are added. The substrate includes a “top”surface and a “bottom” surface. The top surface of the substrate istypically where a semiconductor device is formed, and therefore thesemiconductor device is formed at a top side of the substrate unlessstated otherwise. The bottom surface is opposite to the top surface andtherefore a bottom side of the substrate is opposite to the top side ofthe substrate. The substrate itself can be patterned. Materials added ontop of the substrate can be patterned or can remain un-patterned.Furthermore, the substrate can include a wide array of semiconductormaterials, such as silicon, germanium, gallium arsenide, indiumphosphide, etc. Alternatively, the substrate can be made from anelectrically non-conductive material, such as a glass, a plastic, or asapphire wafer.

As used herein, the term “layer” refers to a material portion includinga region with a thickness. A layer has a top side and a bottom sidewhere the bottom side of the layer is relatively close to the substrateand the top side is relatively away from the substrate. A layer canextend over the entirety of an underlying or overlying structure, or canhave an extent less than the extent of an underlying or overlyingstructure. Further, a layer can be a region of a homogeneous orinhomogeneous continuous structure that has a thickness less than thethickness of the continuous structure. For example, a layer can belocated between any set of horizontal planes between, or at, a topsurface and a bottom surface of the continuous structure. A layer canextend horizontally, vertically, and/or along a tapered surface. Asubstrate can be a layer, can include one or more layers therein, and/orcan have one or more layer thereupon, there above, and/or there below. Alayer can include multiple layers. For example, an interconnect layercan include one or more conductive and contact layers which contacts,interconnect lines, and/or vertical interconnect accesses (VIAs) formed)and one or more dielectric layers.

In the present disclosure, for ease of description, “tier” is used torefer to elements of substantially the same height along the verticaldirection. For example, a word line and the underlying gate dielectriclayer can be referred to as “a tier,” a word line and the underlyinginsulating layer can together be referred to as “a tier,” word lines ofsubstantially the same height can be referred to as “a tier of wordlines” or similar, and so on.

As used herein, the term “nominal/nominally” refers to a desired, ortarget, value of a characteristic or parameter for a component or aprocess step, set during the design phase of a product or a process,together with a range of values above and/or below the desired value.The range of values can be due to slight variations in manufacturingprocesses or tolerances. As used herein, the term “about” indicates thevalue of a given quantity that can vary based on a particular technologynode associated with the subject semiconductor device. Based on theparticular technology node, the term “about” can indicate a value of agiven quantity that varies within, for example, 10-30% of the value(e.g., ±10%, ±20%, or ±30% of the value).

In the present disclosure, the term“horizontal/horizontally/lateral/laterally” means nominally parallel toa lateral surface of a substrate, and the term “vertical” or“vertically” means nominally perpendicular to the lateral surface of asubstrate.

As used herein, the term “3D memory” refers to a three-dimensional (3D)semiconductor device with vertically oriented strings of memory celltransistors (referred to herein as “memory strings,” such as NANDstrings) on a laterally-oriented substrate so that the memory stringsextend in the vertical direction with respect to the substrate.

High-voltage devices such as high-voltage n-type or p-type devices areimplemented in 3D memory cells to facilitate cell operation. In 3Dmemory circuits, high-voltage n-type and p-type devices can be placedadjacent to each other and respectively connected to high voltages(e.g., about 15V-25V) during operations. As such, sufficient isolationbetween the high-voltage n-type and p-type devices needs to beimplemented to prevent crosstalk between adjacent high-voltage devices.The development of 3D memory (e.g., 3D NAND flash memory) progresstowards high density and high capacity memory cells and the number ofdevices and the number of metal wirings are continuously increasing. Asseparation between devices continues to shrink, high quality isolationstructures are becoming more critical to prevent crosstalk betweenadjacent devices.

Various embodiments in accordance with the present disclosure providestructures and fabricating methods for isolation structures thatimproves isolation between high-voltage devices of 3D memory structures,A peripheral device wafer containing CMOS devices can be bonded to anarray wafer containing 3D memory arrays. Isolation structures can beimplemented in the bonded peripheral/memory array wafers to preventcrosstalk between adjacent structures, such as between wells ofdifferent doping types for high-voltage devices, such as high-voltagen-type devices and high-voltage p-type devices. The isolation structurescan be formed by thinning a dielectric layer of the peripheral wafer andforming through silicon isolation (TSI) structures to effectivelyseparate different functional regions. By using isolation structuresrather than relying on greater separation between devices or increasingdopant levels of those functional regions, the overall memory densityand manufacturing cost of a 3D NAND flash memory can be improved.

FIG. 1A illustrates a top-down view of an exemplary three-dimensional(3D) memory device 100, according to some embodiments of the presentdisclosure. 3D memory device 100 can be a memory chip (package), amemory die or any portion of a memory die, and can include one or morememory planes 101, each of which can include a plurality of memoryblocks 103. Identical and concurrent operations can take place at eachmemory plane 101. Memory block 103, which can be megabytes (MB) in size,can be the smallest size to carry out erase operations. Shown in FIG. 1,exemplary 3D memory device 100 includes four memory planes 101 and eachmemory plane 101 includes six memory blocks 103. Each memory block 103can include a plurality of memory cells, where each memory cell can beaddressed through interconnections such as bit lines and word lines. Thebit lines and word lines can be laid out perpendicularly (e.g., in rowsand columns, respectively), forming an array of metal lines. Thedirection of bit lines and word lines are labeled as “BL” and “WL” inFIG. 1. In this disclosure, memory block 103 is also referred to as a“memory array” or “array.” The memory array is the core area in a memorydevice, performing storage functions.

3D memory device 100 also includes a periphery region 105, an areasurrounding memory planes 101. Periphery region 105 can contain manydigital, analog, and/or mixed-signal circuits to support functions ofthe memory array, for example, page buffers, row and column decoders andsense amplifiers. Peripheral circuits use active and/or passivesemiconductor devices, such as transistors, diodes, capacitors,resistors, etc., as would be apparent to a person of ordinary skill inthe art.

The arrangement of memory planes 101 in 3D memory device 100 and thearrangement of memory blocks 103 in each memory plane 101 illustrated inFIG. 1 are only provided as an example, which does not limit the scopeof the present disclosure.

Referring to FIG. 1B, an enlarged top-down view of a region 108 in FIG.1A is illustrated, according to some embodiments of the presentdisclosure. Region 108 of 3D memory device 100 can include a staircaseregion 210 and a channel structure region 211. Channel structure region211 can include an array of memory strings 212, each including aplurality of stacked memory cells. Staircase region 210 can include astaircase structure and an array of contact structures 214 formed on thestaircase structure. In some embodiments, a plurality of slit structures216, extending in WL direction across channel structure region 211 andstaircase region 210, can divide a memory block into multiple memoryfingers 218. At least some slit structures 216 can function as thecommon source contact for an array of memory strings 212 in channelstructure regions 211. A top select gate cut 220 can be disposed in themiddle of each memory finger 218 to divide a top select gate (TSG) ofmemory finger 218 into two portions, and thereby can divide a memoryfinger into two programmable (read/write) pages. While erase operationof a 3D NAND memory can be carried out at memory block level, read andwrite operations can be carried out at memory page level. A page can bekilobytes (KB) in size. In some embodiments, region 108 also includesdummy memory strings for process variation control during fabricationand/or for additional mechanical support.

FIG. 2 illustrates a perspective view of a portion of an exemplarythree-dimensional (3D) memory array structure 200, according to someembodiments of the present disclosure. Memory array structure 200includes a substrate 330, an insulating film 331 over the substrate 330,a tier of lower select gates (LSGs) 332 over the insulating film 331,and a plurality of tiers of control gates 333, also referred to as “wordlines (WLs),” stacking on top of the LSGs 332 to form a film stack 335of alternating conductive and dielectric layers. The dielectric layersadjacent to the tiers of control gates are not shown in FIG. 2 forclarity.

The control gates of each tier are separated by slit structures 216-1and 216-2 through the film stack 335. Memory array structure 200 alsoincludes a tier of top select gates (TSGs) 334 over the stack of controlgates 333. The stack of TSG 334, control gates 333 and LSG 332 are alsoreferred to as “gate electrodes.” Memory array structure 300 furtherincludes memory strings 212 and doped source line regions 344 inportions of substrate 330 between adjacent LSGs 332. Each memory strings212 includes a channel hole 336 extending through insulating film 331and film stack 335 of alternating conductive and dielectric layers.Memory strings 212 can also include a memory film 337 on a sidewall ofthe channel hole 336, a channel layer 338 over the memory film 337, anda core filling film 339 surrounded by the channel layer 338. A memorycell 340 can be formed at the intersection of control gate 333 andmemory string 212. Memory array structure 300 further includes aplurality of bit lines (BLs) 341 connected with memory strings 212 overTSGs 334. Memory array structure 300 also includes a plurality of metalinterconnect lines 343 connected with the gate electrodes through aplurality of contact structures 214. The edge of film stack 335 isconfigured in a shape of staircase to allow an electrical connection toeach tier of the gate electrodes.

In FIG. 2, for illustrative purposes, three tiers of control gates333-1, 333-2, and 333-3 are shown together with one tier of TSG 334 andone tier of LSG 332. In this example, each memory string 212 can includethree memory cells 340-1, 340-2 and 340-3, corresponding to the controlgates 333-1, 333-2 and 333-3, respectively. In some embodiments, thenumber of control gates and the number of memory cells can be more thanthree to increase storage capacity, Memory array structure 200 can alsoinclude other structures, for example, TSG cut, common source contactand dummy channel structure. These structures are not shown in FIG. 2for simplicity.

To achieve higher storage density, the number of vertical WL stacks of a3D memory or the number of memory cells per memory string has beengreatly increased, for example, from 24 stacked WL layers (i.e. 24 L) to128 layers or more. To further reduce the size of a 3D memory, thememory array can be stacked on top of the peripheral circuitry or viceversa. For example, the peripheral circuitry can be fabricated on afirst substrate and the memory array can be fabricated on a secondsubstrate. Then the memory array and the peripheral circuitry can beelectrically coupled (e.g., electrically connected or in physicalcontact) through various interconnects by bonding the first and secondsubstrates together. As such, not only the 3D memory density can beincreased, but also communication between the peripheral circuitry andmemory array can achieve higher bandwidth and lower power consumptionsince the interconnect lengths can be shorter through substrate (wafer)bonding.

With the increase in the density and performance of 3D memory devices,improvement in the peripheral circuitry is also needed to providefunctional support for the memory array, for example, reading, writingand erasing the data of the memory cells. Isolation structures can beimplemented in the bonded peripheral/memory array wafers to preventcrosstalk between adjacent structures, such as between wells ofdifferent doping types. The isolation structures can be formed bythinning a dielectric layer of the peripheral wafer and forming throughsilicon isolation (TSO) structures to effectively separate differentfunctional regions.

FIG. 3 is a flow diagram of an exemplary method 300 for formingisolation structures in 3D memory devices, in accordance with someembodiments of the present disclosure. A 3D memory device can be formedby connecting a peripheral circuitry wafer with a memory array waferthrough wafer bonding and forming deep isolation structures in theperipheral circuitry wafer to prevent crosstalk. The operations ofmethod 300 can be performed in a different order and/or vary, and method300 may include more operations that are not described for simplicity.FIGS. 3-9 are cross-sectional views of fabricating an exemplarysemiconductor structure 300 incorporating isolation structures. FIGS.3-9 are provided as exemplary cross-sectional views to facilitate in theexplanation of method 300. Although the fabrication process of formingisolation structures in a dielectric layer is described here as anexample, the fabrication process can be applied on various other layers,such as on interlayer dielectrics, insulation layers, conductive layers,and any other suitable layers. The fabrication processes provided hereare exemplary, and alternative processes in accordance with thisdisclosure may be performed that are not shown in these figures.

At operation 302, peripheral circuitry wafer of a 3D memory device isformed, according to some embodiments of the present disclosure.Referring to FIG. 4, peripheral circuitry 400 can include variouscomponents of a 3D memory device, such as, first substrate 430, aplurality of peripheral devices such as high-voltage devices 450A and450B, shallow trench isolation (STI) 452, first well 451, second well454, third well 457, gate stack 456, gate spacer 458, and peripheralinterconnect layer 462. In some embodiments, high-voltage devices 450Aand 450B can be high-voltage p-type and n-type devices, respectively. Insome embodiments, first and second wells 451 and 454 can be n-type wellsdoped with n-type dopants. In some embodiments, third well 457 can be ap-type well doped with p-type dopants.

First substrate 430 can include silicon (e.g., single crystallinesilicon), silicon germanium (SiGe), germanium (Ge), silicon on insulator(SOI), germanium on insulator (GOI), gallium arsenide (GaAs), galliumnitride, silicon carbide, glass, III-V compound, any other suitablematerials or any combinations thereof. In some embodiments, the firstsubstrate 430 can be double-side polished prior to peripheral devicefabrication. In this example, the first substrate 430 includes surfaceson the top and bottom sides (also referred to as a first side 430-1 anda second side 430-2, or a front side and a backside, respectively) bothpolished and treated to provide a smooth surface for high qualitysemiconductor devices. The first and second sides are opposite sides offirst substrate 430.

Peripheral circuitry 400 can include one or more peripheral devices 450Aand 450B on the first substrate 430. Peripheral devices 450A and 450Bare adjacent to each other and can be formed on first substrate 430, inwhich the entirety or part of the peripheral devices 450A and 450B areformed in first substrate 430 (e.g., below the top surface of the firstsubstrate 430) and/or directly on the first substrate 430. Peripheraldevices 450A and 450B can include any suitable semiconductor devices,for example, peripheral device 450A can be high-voltage p-type devicesuch as high-voltage PFET. Peripheral device 450B can be high-voltagen-type device such as high-voltage NFET. Peripheral devices 450A and450B can also be metal oxide semiconductor field effect transistors(MOSTETs), bipolar junction transistors (BJTs), diodes, resistors,capacitors, inductors, etc. Among the semiconductor devices, p-typeand/or n-type MOSFETs (i.e., (MOS) are widely implemented in logiccircuit design, and are used as examples for peripheral devices 450A and450B in the present disclosure. Therefore, peripheral circuitry 400 canalso be referred to as CMOS wafer 400. Peripheral devices 450A and 450Bcan be either a p-channel MOSFET or an n-channel MOSFET and can include,but not limited to, an active device region surrounded by shallow trenchisolation (STI) 452, a gate stack 456 that includes a gate dielectric, agate conductor and/or a gate hard mask. First, second, and third wells451, 454, and 457 can be any suitable wells for peripheral devices 450Aand 450B. Peripheral devices 450A and 450B can also include asource/drain extension and/or halo region (not shown in FIG. 4), a gatespacer 458 and a source/drain 460 located on each side of the gatestack. Peripheral devices 450A and 450B can further include silicidecontact areas (not shown) in the top portion of the source/drain. Othersuitable devices can be also formed on first substrate 430.

STI 452 can be formed through patterning the substrate using lithographyand etching, filling an insulating material and polishing the insulatingmaterial to form a coplanar surface on first substrate 430. Aninsulating material for STI can include silicon oxide, siliconoxynitride, TEOS, low-temperature oxide (LTO), high temperature oxide(HTO), silicon nitride, etc. An insulating material for STI 452 can bedisposed using techniques such as chemical vapor deposition (CVD),physical vapor deposition (PVD), plasma-enhanced CVD (PECVD), lowpressure chemical vapor deposition (LPCVD), high density plasma (HDP)chemical vapor deposition, rapid thermal chemical vapor deposition(RTCVD), metal organic chemical vapor deposition (MOCVD), atomic layerdeposition (ALD), sputtering, thermal oxidation or nitridation, orcombinations thereof. The forming of STI 452 can also include a hightemperature annealing step to densify the disposed insulating materialfor improved electrical isolation.

First, second, and third wells 451, 454, and 457 of peripheral devices450A and 450B can include a p-type doping for n-channel MOSFET or ann-type doping for p-channel MOSFET. For example, peripheral device 450Acan be a high-voltage p-type device such as HVPFET and first well 451can be a high-voltage n-type well. In some embodiments, peripheraldevice 450B can be a high-voltage n-type device such as HVNFET andsecond and third wells can be doped with n-type and p-type dopants,respectively. The dopant profile and concentration of first, second, andthird wells 451, 454, and 470 can affect the device characteristics ofperipheral devices 450A or 450B. For MOSFET devices with low thresholdvoltage (V_(t)), one or more suitable wells can be doped with lowerconcentration, and can form low-voltage p-well or low-voltage n-well.For MOSFET with high V_(t), one or more suitable wells can be doped withhigher concentration, and can form high-voltage p-well or high-voltagen-well. In some embodiments, to provide electrical isolation from ap-type substrate, a deep n-well can be formed underneath a high-voltagep-well for an n-channel MOSFET with high V_(t). Peripheral devices 450Aand 450B can be devices operated under any suitable conditions. Forexample, peripheral device 450A can be a low-voltage device whileperipheral device 450B can be a high-voltage device, and suitable wellscan be n-type well embedded in substrate 430 that can be a p-typesubstrate. In some embodiments, other wells and structures can beincluded.

The forming of an n-well can include any suitable n-type dopant, such asphosphorus, arsenic, antimony, etc., and/or any combination thereof. Theforming of a p-well can include any suitable p-type dopant, for exampleboron. The dopant incorporation can be achieved through ion implantationfollowed by activation anneal, or through in-situ doping during epitaxyfor the active device region.

Gate stack 456 of peripheral devices 450A and 450B can be formed by a“gate first” scheme, where gate stack 456 is disposed and patternedprior to source/drain formation. Gate stack 456 of peripheral devices450A and 450B can also be formed by a “replacement” scheme, where asacrificial gate stack can be formed first and then replaced by a high-kdielectric layer and a gate conductor after source/drain formation.

In some embodiments, the gate dielectric can be made of silicon oxide,silicon nitride, silicon oxynitride, and/or high-k dielectric films suchas hafnium oxide, zirconium oxide, aluminum oxide, tantalum oxide,magnesium oxide, or lanthanum oxide films, and/or combinations thereof.The gate dielectric can be disposed by any suitable methods such as CVD,PVD, PECVD, LPCVD, RTCVD, sputtering, MOCVD, ALD, thermal oxidation ornitridation, or combinations thereof.

In some embodiments, the gate conductor can be made from a metal ormetal alloy, such as tungsten, cobalt, nickel, copper, or aluminum,and/or combinations thereof. In some embodiments, the gate conductor canalso include a conductive material, such as titanium nitride (TiN),tantalum nitride (TaN), etc. The gate conductor can be formed by anysuitable deposition methods, for example, sputtering, thermalevaporation, e-beam evaporation, ALD, PVD, and/or combinations thereof.

In some embodiments, the gate conductor can also include apoly-crystalline semiconductor, such as poly-crystalline silicon,poly-crystalline germanium, poly-crystalline germanium-silicon and anyother suitable material, and/or combinations thereof. In someembodiments, the poly-crystalline material can be incorporated with anysuitable types of dopant, such as boron, phosphorous, or arsenic, etc.In some embodiments, the gate conductor can also be an amorphoussemiconductor with aforementioned materials.

In some embodiments, the gate conductor can be made from a metalsilicide, including WSi_(x), CoSi_(x), NiSi_(x), or AlSi_(x), etc. Theforming of the metal silicide material can include forming a metal layerand a poly-crystalline semiconductor using similar techniques describedabove. The forming of metal silicide can further include applying athermal annealing process on the deposited metal layer and thepoly-crystalline semiconductor layer, followed by removal of unreactedmetal.

Gate spacer 458 can be formed through disposing an insulating materialand then performing anisotropic etching. The insulating material forgate spacer 458 can be any insulator, including silicon oxide, siliconnitride, silicon oxyntiride, TEOS, LTO, HTO, etc. Gate spacer 458 can bedisposed using techniques such as CVD, PVD, PECVD, LPCVD, RTCVD, MOCVD,ALD, sputtering, or combinations thereof. The anisotropic etching ofgate spacer 458 includes dry etching, for example reactive ion etching(RIE).

A length of gate stack 456 between source/drain 460 is an importantfeature of the MOSFET. The gate length L determines the magnitude ofdrive current of a MOSFET and is therefore scaled down aggressively forlogic circuits. The gate length can be less than about 100 nm. In someembodiments, the gate length can be in a range between about 5 nm toabout 30 nm. Patterning of the gate stack with such a small dimension isvery challenging, and can use techniques including optical proximitycorrection, double exposure and/or double etching, self-aligned doublepatterning, etc.

In some embodiments, source/drain 460 of peripheral devices 450A and450B is incorporated with high concentration dopants. For n-typeMOSFETs, the dopant for source/drain 460 can include any suitable n-typedopant, such as phosphorus, arsenic, antimony, etc., and/or anycombination thereof. For p-type MOSFETs, the dopant for source/drain 460can include any suitable p-type dopant, for example boron. The dopantincorporation can be achieved through ion implantation followed bydopant activation anneal. Source/drain 460 can be made of the samematerial as first substrate 430, for example, silicon. In someembodiments, source/drain 460 of peripheral devices 450A and 450B can bemade of a different material from first substrate 430 to achieve highperformance. For example, on a silicon substrate, source/drain 460 for ap-type MOSFETs can include SiGe and source/drain 460 for an n-typeMOSFETs can be incorporated with carbon. The forming of source/drain 460with a different material can include etching back the substratematerial in the source/drain area and disposing new source/drainmaterial using techniques such as epitaxy. Doping for source/drain 460can also be achieved through in-situ doping during epitaxy.

Peripheral devices 450A and 450B can also have an optional source/drainextension and/or halo region (not shown in FIG. 2) along each side ofgate stack 456. The source/drain extension and/or halo region locatesinside the active device region below the gate stack, and is implementedmainly for improved short channel control for peripheral devices 450Aand 450B with a channel length less than about 0.5 μm. The forming ofthe source/drain extension and/or halo region can be similar to theforming of source/drain 460, but may use different implantationconditions (e.g., dose, angle, energy, species, etc.) to obtainoptimized doping profile, depth or concentration.

Peripheral devices 450A and 450B can be formed on first substrate 430with a planar active device region (as shown in FIG. 4), where thedirection of MOSFET's channel and current flow is parallel to a surfaceof first substrate 430. In some embodiments, peripheral devices 450A and450B can also be formed on first substrate 430 with a 3D active deviceregion, for example a so-called “FINFET” in a shape like a “FIN” (notshown), where the gate stack of the MOSFET is wrapped around the FIN,and the MOSFET's channel lies along three sides of the FIN (top and twosidewalls under the gate).

In some embodiments, peripheral circuitry 400 can include a peripheralinterconnect layer 462 (or a first interconnect layer), above peripheraldevices 450A and 450B, to provide electrical connections betweendifferent peripheral devices 450A and 450B and external devices e.g.,power supply, another chip, I/O device, etc.). Peripheral interconnectlayer 462 can include one or more interconnect structures, for example,one or more vertical contact structures 464 and one or more lateralconductive lines 466. Contact structure 464 and conductive line 466 canbroadly include any suitable types of interconnects, such asmiddle-of-line (MOL) interconnects and back-end-of-line (BEOL)interconnects. Contact structure 464 and conductive line 466 inperipheral circuitry 400 can include any suitable conductive materialssuch as tungsten (W), cobalt (Co), copper (Cu), titanium (Ti), tantalum(Ta), aluminum (Al), titanium nitride (TiN), tantalum nitride (TaN),nickel, silicides (WSi_(x), CoSi_(x), NiSi_(x), AlSi_(x), etc.), metalalloys, or any combination thereof. The conductive materials can bedeposited by one or more thin film deposition processes such as chemicalvapor deposition (CVD), plasma-enhanced CVD (PECVD), physical vapordeposition (PVD), atomic layer deposition (ALD), electroplating,electroless plating, sputtering, evaporation, or any combinationthereof.

Peripheral interconnect layer 462 can further include an insulatinglayer 468. Insulating layer 468 in peripheral interconnect layer 462 caninclude insulating materials, for example, silicon oxide, siliconnitride, silicon oxynitride, doped silicon oxide (such as F-, C-, N- orH-doped oxides), tetraethoxysilane (TEOS), polyimide, spin-on-glass(SOG), low-k dielectric material such as porous SiCOH, silsesquioxan(SSQ), or any combination thereof. The insulating materials can bedeposited by one or more thin film deposition processes such as CVD,PVD, PECVD, ALD, high-density-plasma CVD (HDP-CVD), sputtering,spin-coating, or any combination thereof.

In FIG. 4, two conductive levels 470-1 and 470-2 (also referred to as“metal levels”) are illustrated as an example, where each metal levelcan include contact structures 464 and conductive lines 466 whereconductive lines 466 of the same metal level are located at the samedistance from first substrate 430. The number of metal levels 470 forperipheral circuitry 400 is not limited and can be any number optimizedfor the performance of the 3D memory.

Peripheral interconnect layer 462 can be formed by stacking metal levels470 from bottom to top of peripheral circuitry 400. In the example ofperipheral circuitry 400 in FIG. 4, bottom metal level 470-1 can beformed first and then upper metal level 470-2 can be formed on top ofbottom metal level 470-1. Fabrication processes of each metal level 470can include, but not limited to, disposing a portion of the insulatinglayer 468 with a thickness required for the metal level, patterning theportion of insulating layer 468 using photo lithography and dry/wetetching to form contact holes for contact structures 464 and conductivelines 466, disposing conductive materials to fill the contact holes forcontact structures 464 and conductive lines 466, and removing excessiveconductive materials outside the contact holes by using planarizationprocess such as chemical mechanical polishing (CMP) or reactive ionetching (RIE).

In some embodiments, peripheral circuitry 400 also includes one or moresubstrate contacts 472, where substrate contacts 472 provide electricalconnections to first substrate 430. Substrate contact 472 can includeone or more conductive levels 470 with multiple tiers of verticalcontact structures 464 and lateral conductive lines 466. In FIG. 4,substrate contact 472 with one tier of contact structure and conductiveline is shown as an example, where the vertical contact structure ofsubstrate contact 472 extends through insulating layer 468 andelectrically contacts first substrate 430. In some embodiments,peripheral circuitry 400 can also include contacts 471 to provideelectrical connections to suitable devices embedded in insulating layer468. Contacts 471 can be electrically coupled to lateral conductive line466.

In some embodiments, the topmost conductive lines 466 (e.g., 466-2 inFIG. 4) can be exposed as the top surface of peripheral circuitry 400,where the topmost conductive lines 466-2 can be directly connected withthe conductive lines on another chip or an external device.

In some embodiments, topmost conductive lines 466-2 can be embeddedinside insulating layer 468 (as shown in FIG. 4), where the insulatingmaterial on top of conductive lines 466 provide scratch protectionduring shipping or handling. Electrical connections to the topmostconductive lines 466 can be established later by forming metal VIAs, orsimply by etching back the insulating layer 468 using dry/wet etching.

Peripheral devices 450A and 450B, however, is not limited to MOSFET. Thestructures of the other devices, for example diodes, resistors,capacitors, inductors, BJTs, etc., can be formed simultaneously duringMOSFETs fabrication through different mask design and layout. To formdevices other than MOSFETs, process steps can be added or modified in aMOSFET's process flow, for example, processes to obtain different dopantprofiles, film thicknesses or material stacks, etc. In some embodiments,peripheral devices 450A and 450B other than MOSFET can also befabricated with additional design and/or lithography mask levels toachieve specific circuit requirements.

In some embodiments, a plurality of peripheral devices 450A and 450B canbe used to form any digital, analog, and/or mixed-signal circuits forthe operation of the peripheral circuitry 400. Peripheral circuitry 400can perform, for example, row/column decoding, timing and control,reading, writing and erasing data of the memory array, etc.

In some embodiments, a deep well 455 can be formed in first substrate430 while forming wells for MOSFETs. Deep well 455 can be p-type dopedor n-type doped. The n-type dopant can be phosphorus, arsenic, antimony,etc. The p-type dopant can be, for example, boron. The dopantincorporation can be achieved through ion implantation of firstsubstrate 430, followed by activation anneal. In some embodiments, deepwell 455 can be formed on first substrate 430 through epitaxy andin-situ doping. The implantation for deep well 455 can be performedright before or after the implantation of other suitable wells. Thedopant activation anneal for deep well 455 can be performedsimultaneously as that for other suitable wells. In some embodiments, adeep well contact 473 can be formed to provide electrical connections tothe deep well 455. In some embodiments, deep well contact 473 formsohmic contact with deep well 455. Deep well contact 473 can formelectrical connection with corresponding circuits of peripheralcircuitry 400 through contact structures 464 and conductive lines 466 inperipheral interconnect layer 462. For example, deep well contact 473can be connected with the ground, substrate contact 472 of firstsubstrate 430, source or drain 460 or gate stack 456 of peripheraldevices 450A and 450B, etc.

At operation 304, a 3D memory array is formed, according to someembodiments of the present disclosure. Referring to FIG. 5, 3D memoryarray 500 can be a 3D NAND memory array and can include a secondsubstrate 530, memory cells 540, and an array interconnect layer 562 (ora second interconnect layer). Second substrate 530 can be similar tofirst substrate 430. Memory cells 540 can be similar to memory cells340-1, 340-2, or 340-3 described above with reference to FIG. 2. Arrayinterconnect layer 562 can be similar to peripheral interconnect layer462 and can be formed using similar materials and similar processes. Forexample, interconnect structures (e.g., contact structures 564 andconductive lines 566) and insulating layer 568 of array interconnectlayer 562 are similar to interconnect structures (e.g., contactstructures 464, conductive lines 466) and insulating layer 468 ofperipheral interconnect layer 462, respectively.

In some embodiments, 3D memory array 500 can be a memory array for 3DNAND flash memory in which memory cells 540 can be stacked vertically asmemory strings 212. Memory string 212 extends through a plurality ofconductor layer 574 and dielectric layer 576 pairs. The plurality ofconductor/dielectric layer pairs are also referred to herein as an“alternating conductor/dielectric stack” 578. Conductor layers 574 anddielectric layers 576 in alternating conductor/dielectric stack 578alternate in the vertical direction. In other words, except the ones atthe top or bottom of alternating conductor/dielectric stack 578, eachconductor layer 574 can be sandwiched by two dielectric layers 576 onboth sides, and each dielectric layer 576 can be sandwiched by twoconductor layers 574 on both sides. Conductor layers 574 can each havethe same thickness or have different thicknesses. Similarly, dielectriclayers 576 can each have the same thickness or have differentthicknesses. In some embodiments, alternating conductor/dielectric stack578 includes more conductor layers or more dielectric layers withdifferent materials and/or thicknesses than the conductor/dielectriclayer pair. Conductor layers 574 can include conductor materials such astungsten, cobalt, copper, aluminum, titanium, tantalum, titaniumnitride, tantalum nitride, nickel, doped silicon, silicides (e.g.,NiSix, WSix, CoSix, TiSix) or any combination thereof. Dielectric layers576 can include dielectric materials such as silicon oxide, siliconnitride, silicon oxynitride, or any combination thereof.

As shown in FIG. 5, each memory string 212 can include channel layer 338and memory film 337. In some embodiments, channel layer 338 includessilicon, such as amorphous silicon, polysilicon, or single crystallinesilicon. In some embodiments, memory film 337 is a composite layerincluding a tunneling layer, a storage layer (also known as “chargetrap/storage layer”), and a blocking layer, Each memory string 212 canhave a cylinder shape (e.g., a pillar shape). Channel layer 338, thetunneling layer, the storage layer, and the blocking layer are arrangedalong a direction from the center toward the outer surface of the pillarin this order, according to some embodiments. The tunneling layer caninclude silicon oxide, silicon nitride, or any combination thereof. Theblocking layer can include silicon oxide, silicon nitride, highdielectric constant (high-k) dielectrics, or any combination thereof.The storage layer can include silicon nitride, silicon oxynitride,silicon, or any combination thereof. In some embodiments, memory film337 includes ONO dielectrics (e.g., a tunneling layer including siliconoxide, a storage layer including silicon nitride, and a blocking layerincluding silicon oxide).

In some embodiments, each conductor layer 574 in alternatingconductor/dielectric stack 578 can act as the control gate for eachmemory cell of memory string 212 (for example control gates 333 in FIG.3). As shown in FIG. 5, memory string 212 can include lower select gate332 (e.g., a source select gate) at a lower end of the memory string212. Memory string 212 can also include top select gate 334 (e.g., adrain select gate) at an upper end of the memory string 212. As usedherein, the “upper end” of a component (e.g., memory string 212) is theend further away from second substrate 530 in the z-direction, and the“lower end” of the component (e.g., memory string 212) is the end closerto second substrate 530 in the z-direction. As shown in FIG. 5, for eachmemory string 212, drain select gate 334 can be above source select gate332. In some embodiments, select gates 332/334 include conductormaterials such as tungsten, cobalt, copper, aluminum, doped silicon,silicides, or any combination thereof.

In some embodiments, 3D memory array 500 includes an epitaxial layer 580on an lower end of channel layer 338 of memory string 212. Epitaxiallayer 580 can include a semiconductor material, such as silicon.Epitaxial layer 580 can be epitaxially grown from a semiconductor layer582 on second substrate 530. Semiconductor layer 582 can be un-doped,partially doped (in the thickness direction and/or the width direction),or fully doped by p-type or n-type dopants. For each memory string 212,epitaxial layer 580 is referred to herein as an “epitaxial plug.”Epitaxial plug 580 at the lower end of each memory string 212 cancontact both channel layer 338 and a doped region of semiconductor layer582. Epitaxial plug 580 can function as the channel of lower selectivegate 332 at the lower end of memory string 212.

In some embodiments, the array device further includes multiple contactstructures 214 of word lines (also referred to as word line contacts) instaircase region 210. Each word line contact structure 214 can formelectrical contact with the corresponding conductor layer 574 in thealternating conductor/dielectric stack 578 to individually control thememory cell 340. Word line contact structure 214 can be formed bydry/wet etching of a contact hole, followed by filling with a conductor,for example, tungsten, titanium, titanium nitride, copper, tantalumnitride, aluminum, cobalt, nickel, or any combination thereof.

As shown in FIG. 5, 3D memory array 500 also includes bit line contacts584 formed on the top of memory strings 212 to provide individual accessto channel layer 338 of memory strings 212. The conductive linesconnected with the word line contact structures 214 and bit linecontacts 584 form word lines and bit lines of 3D memory array 500,respectively. Typically the word lines and bit lines are laidperpendicular to each other in rows and columns, respectively), formingan “array” of the memory.

In some embodiments, 3D memory array 500 also includes a substratecontact 572 of the second substrate 530. Substrate contact 572 can beformed using similar material and process as substrate contact 472 offirst substrate 430. Substrate contact 572 can provide electricalconnection to second substrate 530 of 3D memory array 500.

At operation 306, the peripheral circuitry water and the 3D memory arraywafer are connected, according to some embodiments of the presentdisclosure. Referring to FIG. 6, 3D memory device 600 is formed by waferbonding peripheral circuitry 400 fabricated on first substrate 430 and3D memory array 500 fabricated on second substrate 530. As shown in FIG.6, peripheral circuitry 400 is flipped upside down and joined with the3D memory array 500 through suitable wafer bonding processes such asdirect bonding or hybrid bonding. In some embodiments, other methods forconnecting the peripheral circuitry wafer and the 3D memory array wafercan be used. At a bonding interface 688, peripheral circuitry 400 and 3Dmemory array 500 are electrically connected through plurality ofinterconnect VIAs 486/586.

In some embodiments, bonding interface 688 of 3D memory device 600situates between insulating layer 468 of peripheral interconnect layer462 and insulating layer 568 of array interconnect layer 562.Interconnect VIAs 486 and 586 can be joined at bonding interface 688 toelectrically connect any conductive line 466 or contact structure 464 ofperipheral interconnect layer 462 and any conductive line 566 or contactstructure 564 of the array interconnect layer 562. As such, peripheralcircuitry 400 and 3D memory array 500 can be electrically connected.

In some embodiments, bonding interface 688 of 3D memory device 600situates inside a bonding layer 690. In this example, interconnect VIAs486 and 586 extend through bonding layer 690 and also form electricalconnections between any conductive line 466 or contact structure 464 ofperipheral interconnect layer 462 and conductive line 566 or contactstructure 564 of array interconnect layer 562. As such, peripheralcircuitry 400 and 3D memory array 500 can also be electricallyconnected.

In some embodiments, bonding layer 690 can be disposed on top of theperipheral circuitry 400 (in FIG. 4) and/or 3D memory array 500 (in FIG.5) prior to bonding process. Bonding layer 690 can include dielectricmaterials such as silicon oxide, silicon nitride, silicon oxynitride orany combination thereof. Bonding layer 690 can also include adhesionmaterials, for example, epoxy resin, polyimide, dry film, photosensitivepolymer, etc. Bonding layer 690 can be formed by one or more thin filmdeposition processes such as CVD, PVD, PECVD, ALD, high-density-plasmaCVD (HDP-CVD), sputtering, spin-coating, or any combination thereof.

In some embodiments, after forming bonding layers 690, interconnect VIAs486 and 586 can be formed for peripheral circuitry 400 and 3D memoryarray 500, respectively. Interconnect VIAs 486/586 can include metal ormetal alloy such as copper (Cu), tin (Sn), nickel (Ni), gold (Au),silver (Ag), titanium (Ti), aluminum (Al), titanium nitride (TiN),tantalum nitride (TaN), etc., or any combination thereof. The metal ormetal alloy of interconnect VIAs 486/586 can be disposed by one or morethin film deposition processes such as chemical vapor deposition (CVD),plasma-enhanced CVD (PECVD), physical vapor deposition (PVD), atomiclayer deposition (ALD), electroplating, electroless plating, sputtering,evaporation, or any combination thereof. The fabrication process ofinterconnect VIAs 486/586 can further include, but not limited to,photolithography, wet/dry etching, planarization (e.g., CMP, or RIEetch-back), etc.

In some embodiments, peripheral circuitry 400 and 3D memory array 500can be connected together at die level (e.g., die-to-die, orchip-to-chip) or at wafer level (e.g., wafer-to-wafer or chip-to-wafer),depending on the product design and manufacturing strategy. Waferconnecting such as bonding at wafer level can provide high throughput,where all the dies/chips on first substrate 430 with peripheralcircuitry 400 can be joined simultaneously with second substrate 530with 3D memory array 500. Individual 3D memory device 600 can be dicedafter wafer bonding. On the other hand, bonding at die level can beperformed after dicing and die testing, where functional dies ofperipheral circuitry 400 and 3D memory array 500 can be selected firstand then bonded to form 3D memory device 600, enabling higher yield of3D memory device 600.

In some embodiments, during the bonding process, peripheral interconnectlayer 462 can be aligned with the array interconnect layer 562 wheninterconnect VIAs 486 of peripheral circuitry 400 are aligned withcorresponding interconnect VIAs 586 of 3D memory array 500. As a result,corresponding interconnect VIAs 486/586 can be connected at bondinginterface 688 and 3D memory array 500 can be electrically connected withthe peripheral circuitry 400.

In some embodiments, peripheral circuitry 400 and 3D memory array 500can be joined by hybrid bonding. Hybrid bonding, especiallymetal/dielectric hybrid bonding, can be a direct bonding technology(e.g., forming bonding between surfaces without using intermediatelayers, such as solder or adhesives), which obtains metal-metal bondingand dielectric-dielectric bonding simultaneously. During the bondingprocess, chemical bonds can be formed at the metal-metal bonding surfaceand the dielectric-dielectric surface.

In some embodiments, peripheral circuitry 400 and 3D memory array 500can be bonded by using the bonding layer 690. At bonding interface 688,the bonding can take place between silicon nitride to silicon nitride,silicon oxide to silicon oxide, or silicon nitride to silicon oxide, inaddition to metal to metal bonding. In some embodiments, the bondinglayer can also include an adhesive material to enhance bonding strength,for example, epoxy resin, polyimide, dry film, etc.

In some embodiments, a treatment process can be used to enhance thebonding strength at bonding interface 688. The treatment process canprepare the surfaces of array interconnect layer 562 and peripheralinterconnect layer 462 so that the surfaces of insulating layers 562/462form chemical bonds. The treatment process can include, for example,plasma treatment (e.g. with F, Cl or H containing plasma) or chemicalprocess (e.g., formic acid). In some embodiments, the treatment processcan include a thermal process that can be performed at a temperaturefrom about 250° C. to about 600° C. in a vacuum or an inert ambient(e.g., with nitrogen or Argon). The thermal process can cause metalinter-diffusion between interconnect VIAs 486 and 586. As a result,metallic materials in the corresponding pairs of the interconnect VIAscan be inter-mixed with each other or forming alloy after the bondingprocess.

After bonding the peripheral and array interconnect layers together, atleast one peripheral device of peripheral circuitry 400 fabricated onfirst substrate 430 can be electrically connected with at least onememory cell of 3D memory array 500 fabricated on second substrate 530.Although FIG. 6 illustrates that peripheral circuitry 400 is bonded ontop of 3D memory array 500, 3D memory array 500 can also be bonded ontop of the peripheral circuitry 400.

Through wafer connecting methods such as bonding, 3D memory device 600can function similar to a 3D memory where peripheral circuitry andmemory array are fabricated on the same substrate (as shown in FIG. 1).By stacking 3D memory array 500 and peripheral circuitry 400 on top ofeach other, the density of 3D memory device 600 can be increased. In themeantime, the bandwidth of 3D memory device 600 can be increased becauseof the interconnect distance between peripheral circuitry 400 and 3Dmemory array 500 can be reduced by using the stacked design. After thebonding process, peripheral circuitry 400 has a backside 430-2 exposedand ready for subsequent processing.

At operation 308, the peripheral circuitry wafer is thinned down and adielectric layer is disposed, according to some embodiments of thepresent disclosure. Referring to FIG. 7, 3D memory device 700 isillustrated to resemble 3D memory device 600 in FIG. 6, and alsoincludes peripheral circuitry 400 and 3D memory array 500. Peripheralcircuitry 400 is bonded to 3D memory array 500 at the bonding interface688. 3D memory device 700 can be formed by thinning the first substrate430 of peripheral circuitry 400 after forming 3D memory device 600through bonding.

In some embodiments, first substrate 430 of peripheral circuitry 400 canbe thinned down from backside 430-2. In some embodiments, substratethinning process can include one or more of grinding, dry etching, wetetching, and chemical mechanical polishing (CMP). The thickness T of thefirst substrate 430 after thinning can be in a range between about 1 μmto about 5 μm. For example, thickness T can be between about 2 μm andabout 4 μm. In some embodiments, the thin down process can continueuntil deep well 455 is exposed.

After first substrate 430 is thinned down, a dielectric layer 792 can bedisposed on backside 430-1 (or the second side) of first substrate 430.Dielectric layer 792 can be any suitable semiconductor material, such assilicon oxide, silicon nitride, silicon oxynitride, doped silicon oxide(such as F-, C-, N- or H-doped oxides), tetraethoxysilane (TEOS),polyimide, spin-on-glass (SOG), low-k dielectric material such as porousSiCOH, silsesquioxan (SSQ), or any combination thereof. The insulatingmaterials can be deposited by one or more thin film deposition processessuch as CVD, PVD, PECVD, ALD, high-density-plasma CVD (HDP-CVD),sputtering, spin-coating, or any combination thereof. After deposition,dielectric layer 792 covers the entire surface of the first substrate430. In some embodiments, thickness t of dielectric layer 792 can bebetween about 100 nm and about 1 μm. In some embodiments, thickness tcan be between about 300 nm and about 600 nm. For example, thickness tcan be about 500 nm.

At operation 310, deep isolation trenches are formed in the peripheralcircuitry wafer and between adjacent devices. Referring to FIG. 8, a 3Dmemory device 800 includes a plurality of deep isolation trenches 894formed on backside 430-2 of first substrate 430. Isolation trenchespenetrate through dielectric layer 792 and portions of first substrate430 until STI 452 are exposed at the bottom of isolation trenches 894.In some embodiments, deep isolation trenches 894 also exposes portionsof wells and other structures of peripheral devices 450A and 450B.

The cross-sectional shapes and numbers of deep isolation trenches can bedetermined by various factors, such as the amount of need for deviceisolation and the type of devices. For example, a single deep isolationstructure can be formed on STI 452. In some embodiments, two or moredeep isolation structures can be formed on STI 452. In some embodiments,any suitable number of deep isolation trenches can be used. Deepisolation trenches can also have any suitable cross-sectional shape. Forexample, cross-sectional shape of deep isolation trenches 894illustrated in FIG. 8 can have a trapezoidal shape with top width W₁measured at the top of deep isolation trenches 894 and bottom width W₂measured at the bottom of deep isolation trenches 894. As illustrated inFIG. 8, deep isolation trenches 894 can have a greater width at the topthan at the bottom of the structure, and such configuration can preventvoids in the subsequently disposed isolation material. In someembodiments, width W₁ can be in a range between about 0.1 μm and about 5μm. In some embodiments, width W₂ can be in a range between about 0.05μm and about 0.25 μm. In some embodiments, widths W₁ and W₂ can besubstantially the same. For example, widths W₁ and W₂ can be about 0.2μm. In some embodiments, a top-to-bottom ratio R₁ of W₁ over W₂ can bebetween about 1.5 and about 2.5. For example, R₁ can be about 2. In someembodiments, as deep isolation trenches 894 can penetrate through bothdielectric layer 792 and portions of first substrate 430, a depth D ofdeep isolation trenches 894 can be in a range between about 1 μm andabout 6 μm. In some embodiments, a depth of STI 452 can be between about300 nm and about 450 nm. In some embodiments, ratio of depth D over thecombined thickness of thinned first substrate 430 and dielectric layer792 (thicknesses T and t) can range between about 60% and about 95%. Insome embodiments, an aspect ratio of deep isolation structures can bebetween about 10 and about 20. In some embodiments, the aspect ratio canbe greater than about 20. In some embodiments, an angle α between bottomsurface and sidewall surfaces of deep isolation trenches 894 can be in arange between about 90° and about 45°. In some embodiments, deepisolation trenches 894 can have sidewalls that are substantiallyperpendicular to its bottom surface.

In some embodiments, trenches 896 can be formed concurrently with deepisolation trenches 894. Trenches 896 can be formed through dielectriclayer 792 and first substrate 430. Trenches 896 can be aligned tounderlying contacts 471, and the etching processes used to form trenches896 can continue until surfaces of underlying contacts 471 are exposed,as shown in FIG. 8. In some embodiments, trenches 896 can be formedusing a different process for forming deep isolation trenches 894.

At operation 312, isolation material is disposed in the deep isolationtrenches and a planarization process is performed, according to someembodiments, of the present disclosure. Referring to FIG. 9, deepisolation structures 994 are formed in deep isolation trenches 894 of a3D memory device 900 by depositing isolation material and performing aplanarization process. Deep isolation structures 994 can be used toprevent crosstalk that can occur between adjacent devices such asperipheral devices 450A and 450B through first substrate 430. Deepisolation structures 994 can also prevent peripheral devices 450A and450B from affecting any other surrounding devices. For example, deepisolation structures 994 can prevent electrical short circuits betweendifferent types of adjacent wells, such as between an n-type well and ap-type well. In some embodiments, deep isolation structures can preventan electrical short circuit between wells that are coupled to differentbias voltages. For example, a short can be prevented between a firstwell that is coupled to a high voltage (e.g., about 20V) and a secondwell coupled to a ground voltage reference level (e.g., about 0V). Insome embodiments, deep isolation structures 994 can prevent electricalshort circuits between terminals of different devices that are embeddedin a same well. For example, deep isolation structures 994 can preventan electrical short circuit between a source/drain terminal of a firstdevice and a source/drain terminal of a second device, where bothdevices are formed in the same well (e.g., an n-type well or a p-typewell). Deep isolation structures 994 can be in physical contact with STIstructure 452. Isolation material can be any suitable material thatprevents crosstalk between adjacent devices. For example, isolationmaterial can be a low-k material (e.g., having dielectric constant lessthan about 3.9). In some embodiments, isolation material can be siliconoxide, silicon nitride, silicon oxynitride, silicon carbide,fluoride-doped silicate glass (FSG), any suitable dielectric material,and/or combinations thereof. In some embodiments, a liner layer can bedisposed in deep isolation trenches 894 prior to the deposition ofisolation material. For example, a liner layer (not illustrated in FIG.9) can be a catalytic layer that promotes the adhesion of subsequentlydisposed isolation material or a barrier layer that can prevent possiblecontamination of first substrate due to the subsequent deposition ofisolation material. For example, the liner layer can be silicon oxide,silicon nitride, silicon oxynitride, silicon carbide, silicon carbidenitride, titanium nitride, tantalum nitride, any suitable material,and/or combinations thereof. In some embodiments, the liner layer ispositioned between the isolation material and first substrate 430.

In some embodiments, isolation material can be disposed by a blanketdeposition process until deep isolation trenches 894 are fully filledwith isolation material, followed by a planarization process thatremoves any excessive isolation material disposed on top surface ofdielectric layer 792. The planarization process can bechemical-mechanical-polishing (CMP), reactive ion etching (RIE) process,wet etching process, a suitable process, and/or combinations thereof.The planarization process can be performed until top surfaces of deepisolation structures 994 and dielectric layer 792 are substantiallycoplanar (e.g., level). In some embodiments, deep isolation structures994 can be formed in any suitable locations of 3D memory device 900where device isolation is needed.

Conductive material can be deposited into trenches 896 to form throughsilicon contacts (TSC) 996. TSC 996 can be electrically coupled (e.g.,electrically connected) to contacts 471 for conducting power and/orelectrical signals. In some embodiments, trenches 896 can be filled withtungsten, copper, silver, aluminum, other suitable conducting materials,and/or combinations thereof. The conductive material can be formed usingCVD, PVD, sputtering, electroplating, electroless plating, any suitabledeposition methods, and/or combinations thereof. A CMP process can beperformed on dielectric layer 792 and the conductive materials disposedin trenches 896, such that top surfaces of TSC 996, dielectric layer792, and deep isolation structures 994 are substantially co-planar(e.g., level).

Dielectric layer 997 can be disposed on the top surfaces of TSC 996,dielectric layer 792, and deep isolation structures 994. In someembodiments, dielectric layer 997 can be formed using any suitabledielectric material such as low-k dielectric material (e.g., dielectricmaterial having dielectric constant lower than about 3.9). In someembodiments, dielectric layer 997 can be formed using silicon oxide,silicon nitride, any suitable dielectric material, and/or combinationsthereof.

One or more contact pads 998 can be formed in dielectric layer 997 andelectrically coupled to underlying TSC 996. Contact pads 998 can beformed using tungsten, aluminum, copper, silver, any suitable conductivematerial, and/or combinations thereof. One or more contact pads 998 canprovide as an access point for external control to electrically accessand control the 3D memory device 900. In some embodiments, contact pads998 can be formed by a patterning and etching process, such as adamascene process.

FIGS. 10A-10B illustrate top-down views of portions of exemplarythree-dimensional (3D) memory device 1000, according to some embodimentsof the present disclosure. 3D memory device 1000 includes dielectriclayer 1097 and peripheral devices 1010A and 1010B formed underdielectric layer 1097. Peripheral devices 1010A and 1010B can behigh-voltage devices such as high-voltage p-type devices and n-typedevices. Dielectric layer 1097, peripheral devices 1010A and 1010B canbe respectively similar to dielectric layer 997 and peripheral devices450A and 450B illustrated in FIG. 9, and are not described in detailhere for simplicity. Referring to FIG. 9, peripheral devices 450A and450B are formed below dielectric layer 997, therefore are not visible ina direct top-down view. For illustration purposes, peripheral devices1010A and 1010B are visible in FIGS. 10A-10B and are outlined withdashed lines for clarity.

As shown in FIGS. 10A-10B, peripheral devices 1010B can be surrounded bydeep isolation structures 1094 which provides isolation and preventscrosstalk between adjacent devices, such as crosstalk between peripheraldevices 1010B and 1010A, and/or between adjacent peripheral devices1010B. Deep isolation structures 1094 can be similar to deep isolationstructures 994 illustrated in FIG. 9. For example, deep isolationstructures 1094 can prevent electrical short circuits between differenttypes of adjacent wells, such as between an n-type well and a p-typewell. In some embodiments, deep isolation structures can prevent anelectrical short circuit between wells that are coupled to differentbias voltages. For example, a short can be prevented between a firstwell that is coupled to a high voltage (e.g., about 20V) and a secondwell coupled to a ground voltage reference level (e.g., about 0V). Insome embodiments, deep isolation structures 1094 can prevent electricalshort circuits between terminals of different devices that are embeddedin a same well. For example, deep isolation structures 1094 can preventan electrical short circuit between a source/drain terminal of a firstdevice and a source/drain terminal of a second device, where bothdevices are formed in the same well (e.g., an n-type well or a p-typewell). In some embodiments, both peripheral devices 1010A and 1010B canbe surrounded by deep isolation structures 1094. In some embodiments,peripheral devices 1010A can be surrounded by deep isolation structures1094. Peripheral devices 1010A and 1010B can include gate stacks 1056that are similar to gate stacks 456 described above in FIG. 4. In someembodiments, gate stacks 456 can extend in the x-direction and/or extendin the v-direction.

Various embodiments in accordance with the present disclosure providestructures and fabricating methods for isolation structures thatimproves isolation between structures of 3D memory structures. Aperipheral device wafer containing CMOS devices can be bonded to anarray wafer containing 3D memory arrays. Isolation structures can beimplemented in the bonded peripheral/memory array wafers to preventcrosstalk between adjacent structures, such as between wells ofdifferent doping types. The isolation structures can be formed bythinning a dielectric layer of the peripheral water and forming throughsilicon isolation (TSI) structures to effectively separate differentfunctional regions.

The foregoing description of the specific embodiments will so fullyreveal the general nature of the present disclosure that others can, byapplying knowledge within the skill of the art, readily modify and/oradapt, for various applications, such specific embodiments, withoutundue experimentation, and without departing from the general concept ofthe present disclosure. Therefore, such adaptations and modificationsare intended to be within the meaning and range of equivalents of thedisclosed embodiments, based on the disclosure and guidance presentedherein. It is to be understood that the phraseology or terminologyherein is for the purpose of description and not of limitation, suchthat the terminology or phraseology of the present specification is tobe interpreted by the skilled artisan in light of the disclosure andguidance.

Embodiments of the present disclosure have been described above with theaid of functional building blocks illustrating the implementation ofspecified functions and relationships thereof. The boundaries of thesefunctional building blocks have been arbitrarily defined herein for theconvenience of the description. Alternate boundaries can be defined solong as the specified functions and relationships thereof areappropriately performed.

The Summary and Abstract sections can set forth one or more but not allexemplary embodiments of the present disclosure as contemplated by theinventor(s), and thus, are not intended to limit the present disclosureand the appended claims in any way.

The breadth and scope of the present disclosure should not be limited byany of the above-described exemplary embodiments, but should be definedonly in accordance with the following claims and their equivalents.

What is claimed is:
 1. A method for forming a three-dimensional memorydevice, comprising: forming, on a first side of a first substrate, aplurality of semiconductor devices comprising at least first and secondsemiconductor devices, wherein: the first semiconductor device comprisesa first well formed in the first substrate; and the second semiconductordevice comprises a second well formed in the first substrate; forming ashallow trench isolation (STI) structure between the first and secondwells; forming a first interconnect layer on the plurality ofsemiconductor devices; forming, on a second substrate, a memory arraycomprising a plurality of memory cells and a second interconnect layer;connecting the first and second interconnect layers; forming anisolation trench through the first substrate to expose a portion of theSTI structure, a portion of the first well, and a portion of the secondwell, wherein the isolation trench is formed through a second side ofthe first substrate that is opposite to the first side; and disposing anisolation material to form an isolation structure in the isolationtrench.
 2. The method of claim 1, wherein the first and secondsemiconductor devices comprise a high-voltage n-type device and ahigh-voltage p-type device, respectively.
 3. The method of claim 1,further comprising thinning the first substrate through the second sideafter the connecting the first and second interconnect layers.
 4. Themethod of claim 3, wherein the thinning the first substrate comprisesexposing a deep well on the second side of the first substrate.
 5. Themethod of claim 1, further comprising disposing a liner layer in theisolation trench before disposing the isolation material.
 6. The methodof claim 1, further comprising performing a planarization process toremove portions of the isolation material disposed on the second side ofthe first substrate and disposing a dielectric layer on the second sideof the first substrate.
 7. The method of claim 1, wherein the connectingthe first and second interconnect layers comprises bonding the first andsecond interconnect layers through direct bonding.
 8. The method ofclaim 1, further comprising forming another STI structure adjacent tothe first or second semiconductor device and forming another deepisolation trench through the first substrate and exposing the anotherSTI structure.
 9. The method of claim 1, further comprising disposingthe isolation material directly on the portion of the first well and theportion of the second well.
 10. The method of claim 1, furthercomprising: forming a trench in the first substrate and exposing acontact; and disposing conductive material in the trench and on thecontact to form a through silicon contact (TSC), wherein the TSC iselectrically coupled to the contact.
 11. The method of claim 10, furthercomprising forming at least one contact pad on the TSC, wherein the atleast one contact pad is electrically coupled to the TSC.
 12. The methodof claim 1, wherein disposing the isolation material comprises disposingsilicon oxide material.
 13. The method of claim 7, wherein bonding thefirst and second interconnect layers comprises dielectric-to-dielectricbonding and metal-to-metal bonding at a bonding interface.
 14. A methodfor forming a three-dimensional memory device, comprising: forming, on afirst side of a first substrate, a peripheral circuitry comprising aplurality of semiconductor devices, wherein each semiconductor devicecomprises at least a well and wherein a first well of a firstsemiconductor device is adjacent to a second well of a secondsemiconductor device; forming a first interconnect layer on theperipheral circuitry; forming a plurality of shallow trench isolation(STI) structures in the first substrate, wherein at least an STIstructure of the plurality of STI structures is formed between the firstand second wells; forming, on a second substrate, a memory arraycomprising a plurality of memory cells and a second interconnect layer;connecting the first and second interconnect layers, such that at leastone semiconductor device of the plurality of semiconductor devices iselectrically coupled to at least one memory cell of the plurality ofmemory cells; thinning the first substrate through a second side of thefirst substrate, wherein the second side is opposite to the first side;forming a plurality of isolation trenches through the first substrateand exposing a portion of an STI structure of the plurality of STIstructures, a portion of the first well, and a portion of the secondwell, wherein the plurality of isolation trenches are formed through thesecond side of the first substrate; and disposing an isolation materialin the plurality of isolation trenches.
 15. The method of claim 14,wherein the connecting the first and second interconnect layerscomprises bonding the first and second interconnect layers throughdirect bonding.
 16. The method of claim 14, further comprisingperforming a planarization process to remove portions of the isolationmaterial disposed on the second side of the first substrate anddisposing a dielectric layer on the second side of the first substrate,wherein the plurality of isolation trenches extend through thedielectric layer.
 17. The method of claim 14, further comprisingdisposing the isolation material directly on the portion of the firstwell and the portion of the second well.
 18. The method of claim 14,wherein disposing the isolation material comprises disposing siliconoxide material.
 19. The method of claim 14, wherein the plurality ofsemiconductor devices comprises high-voltage n-type and p-type devices.20. The method of claim 14, further comprising: forming a trench in thefirst substrate and exposing a contact; and disposing conductivematerial in the trench and on the contact to form a through siliconcontact (TSC), wherein the TSC is electrically coupled to the contact.21. The method of claim 20, further comprising forming at least onecontact pad on the TSC, wherein the at least one contact pad iselectrically coupled to the TSC.